Passivation, in physical chemistry and engineering, refers to coating a material so it becomes "passive", that is, less readily affected or corroded by the environment. Passivation involves creation of an outer layer of shield material that is applied as a microcoating, created by chemical reaction with the base material, or allowed to build by spontaneous oxidation in the air. As a technique, passivation is the use of a light coat of a protective material, such as metal oxide, to create a shield against corrosion. Passivation of silicon is used during fabrication of microelectronic devices. In electrochemical treatment of water, passivation reduces the effectiveness of the treatment by increasing the circuit resistance, and active measures are typically used to overcome this effect, the most common being polarity reversal, which results in limited rejection of the fouling layer.

When exposed to air, many metals naturally form a hard, relatively inert surface layer, usually an oxide (termed the "native oxide layer") or a nitride, that serves as a passivation layer. In the case of silver, the dark tarnish is a passivation layer of silver sulfide formed from reaction with environmental hydrogen sulfide. (In contrast, metals such as iron oxidize readily to form a rough porous coating of rust that adheres loosely and sloughs off readily, allowing further oxidation.) The passivation layer of oxide markedly slows further oxidation and corrosion in room-temperature air for aluminium, beryllium, chromium, zinc, titanium, and silicon (a metalloid). The inert surface layer formed by reaction with air has a thickness of about 1.5 nm for silicon, 1–10 nm for beryllium, and 1 nm initially for titanium, growing to 25 nm after several years. Similarly, for aluminium, it grows to about 5 nm after several years.

In the context of the semiconductor device fabrication, such as silicon MOSFET transistors and solar cells, surface passivation refers not only to reducing the chemical reactivity of the surface but also to eliminating the dangling bonds and other defects that form electronic surface states, which impair performance of the devices. Surface passivation of silicon usually consists of high-temperature thermal oxidation.